Silicon Memory Technology Inventor Robert H. Dennard Dies at 91

Robert H. Dennard, the renowned engineer behind the revolutionary silicon memory technology, passed away on April 23 in Sleepy Hollow, N.Y at the age of 91 due to a bacterial infection, as confirmed by his daughter, Holly Dennard.

Mr. Dennard's groundbreaking work commenced in the 1960s at IBM, during a time when computer data storage equipment was expensive, bulky, and slow. It was in this era that he delved into the realm of microelectronics, utilizing silicon-based transistors to store digital information.

In 1966, he achieved a major milestone by inventing a technique to store one digital bit on one transistor, giving birth to dynamic random-access memory (DRAM). This technology preserved information as an electrical charge, albeit slowly fading over time and requiring periodic refreshment.

The Revolution Unleashed

Mr. Dennard's discovery revolutionized data storage by facilitating substantial improvements in capacity, speed, and cost-effectiveness through the use of diminutive silicon chips, taking technology to unprecedented heights.

Robert H. Dennard's legacy lives on through the indispensable role played by DRAM in smartphones, laptops, and tablet computers, transforming the way we store and access data in the digital age.